| 摘要 |
PROBLEM TO BE SOLVED: To provide a surface emitting type semiconductor laser with high efficiency and superior reliability and its manufacturing method with simple productive steps. SOLUTION: A II-VI group compound semiconductor epitaxial layer is embedded partly in a resonator of the surface emitting type semiconductor laser. An optical out-going side reflective mirror is composed of a complex multi-layer film mirror, in which a first III-V group compound semiconductor layer and a second III-V group compound semiconductor layer with different reflectivity are mutually laminated, and an annular metallic electrode having a light out-going opening is formed on the second semiconductor layer. At the same time, a third dielectric layer and a fourth dielectric layer with different reflectivity are mutually laminated at the light out-going opening. As a result, the reflectivity of the resonator under the electrode can be increased, and the light multiple reflection of the resonator is not decreased, so the surface emitting type semiconductor laser with high efficiency can be provided.
|
