| 摘要 |
PURPOSE:To obtain wiring in which breaking at a stage section is not generated by coating a metallic film as a wiring material with silicon thinner than the thickness of the metallic film, reacting the metallic film and a silicon film through heat treatment and forming wiring. CONSTITUTION:An N<+> diffusion layer 102 is formed onto a P type Si substrate 100, a layer insulating film 104 is further shaped onto the layer 102, a contact hole 105 is formed to the insulating film, Al 106 as the metallic wiring material is coated through an evaporation method, the silicon 107 with the one fourth or more thickness of the thickness of the metallic film is coated through a plasma growth method, the surface is patterned, and Al and Si are reacted through heat treatment and the wiring is formed. Accordingly, the disconnecting section of Al is connected by the eutectoid of Al and Si, and disconnection is not generated at the stage section. |
