发明名称 |
High speed plasma etching system. |
摘要 |
<p>This invention relates to a plasma etching system, which includes a lower flange and a spaced upper flange; a chamber wall mounted between the flanges to form a closed etching chamber; a grounded wafer support plate disposed in said chamber for receiving thereon a wafer to be processed; an electrical insulating element interposed between the chamber wall and the support plate; a sintered or sintered-like porous electrode plate mounted in the chamber in spaced relationship with respect to the wafer; said plate having a gas inlet for receiving a supply of etching gas; circuitry for applying an excitation voltage to this plate, and said chamber having a gas outlet leading to a vacuum source.</p> |
申请公布号 |
EP0064163(A2) |
申请公布日期 |
1982.11.10 |
申请号 |
EP19820102911 |
申请日期 |
1982.04.05 |
申请人 |
THE PERKIN-ELMER CORPORATION |
发明人 |
STEINBERG, GEORGE N.;REINBERG, ALAN R.;AVE, JEAN DALLE |
分类号 |
C23F4/00;H01J37/32;H01L21/302;H01L21/3065;(IPC1-7):01J37/32 |
主分类号 |
C23F4/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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