发明名称 ELELCTRON BEAM EXPOSURE AND EQUIPMENT THEREFOR
摘要 PURPOSE:To make the performance to form a photomask or like which has mirror image pattern simpler by a method wherein the direction of beam scanning regarding the required one dimensional direction is reversed and drawing exposure of the mirror image pattern is operated by the data of regular pattern. CONSTITUTION:When mirror image pattern is drawn, a change-over switch 16 of a polarity inversion mechanism 18 is thrown into the side of an inverter 17 and the polarities of X-direction deflecting electrodes 7x1 and 7x2 are reversed. Then the pattern is sketched in accordance with the regular pattern data stored in a controller. As a result, the direction of the field formed between the X-direction deflecting electrode is reversed and the sketched pattern is the mirror image pattern which has its left and right reversed against the regular pattern. With this constitution, the programming of pattern data or master mask forming process which are necessary to form a photomask or like which has mirror image pattern can be omitted.
申请公布号 JPS57180125(A) 申请公布日期 1982.11.06
申请号 JP19810065523 申请日期 1981.04.30
申请人 FUJITSU KK 发明人 MIYAZAKI TAKAYUKI;KAI JIYUNICHI
分类号 G03F1/00;G03F1/76;G03F1/78;H01J37/317;H01L21/027 主分类号 G03F1/00
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