| 摘要 |
PURPOSE:To obtain a two-dimensional thermal head capable of operating at a high speed and providing excellent reliability by employing a thyristor as a heating resistor controlling and providing the thyristor in the region between each of mesas which form the resistors. CONSTITUTION:A plurality of mesas 22 are formed by etching in a matrix state on the surface of a semiconductor substrate 21. Subsequently, the III and V group elements are doped by a thermal diffusion, thereby forming a P-N-P-N layer forming a thyristor 2 between the mesas 22 in the substrate 21, and also forming a cathode electrode 2b, a gate electrode 2c and an anode electrode 2a. Further, a groove 23 and a glass layer 24 are formed between the mesas 22 and the thyristors 2, thereby preventing the thermal conduction to the thyristor 2. After a heating resistor 2, common electrodes 9, 10 and leads 25, 26 are formed at the tops of the mesas 22, a wear resistant protective film 27 is formed. |
