| 摘要 |
In order to ensure CAV recording/reproduction while preventing jitter increase and modulation decrease and thereby ensuring sufficient recording properties, even at a linear velocity in the range of 3.49 to 8.44 m/s, a first dielectric film, phase-versatile recording film, second dielectric film, reflection film and protective film are formed on a disc substrate having formed lands, grooves and wobbling on one major surface. The recording film is made of a GeInSbTe alloy, and the reflection film is made of an AgPdCu alloy or AlCu alloy. Composition of the GeInSbTe alloy is adjusted to contain Ge in the range of 1 to 6 wt%, In in the range of 2 to 6 wt%, and control Sb/Te in the range of 2.4 to 3.0. Composition of the AgPdCu alloy is adjusted to contain Cu not more than 1.5 wt%. Groove depth is controlled in the range of 30 to 40 nm, groove width in the range of 0.27 to 0.33 µm, thickness of the first dielectric film in the range of 65 to 80 nm, thickness of the recording film in the range of 12 to 18 nm, thickness of the second dielectric film in the range of 12 to 20 nm, and thickness of the reflection film in the range of 80 to 160 nm. |
