发明名称 |
Reverse-rotation transfer gates |
摘要 |
Transfer between paths in ion-implanted magnetic bubble memories has been achieved without the use of transfer conductors. The transfer mechanism takes advantage of the three-fold anisotropy of the implanted drive layer which makes it possible for bubbles to pass freely through gaps in one direction while being obstructed from passing through in the other direction. Transfer is controlled by a brief reversal of the direction of rotation of the in-plane field. In one embodiment, a bidirectional transfer gate is employed. Configurations using unidirectional gates and hybrid gates using conductor and reverse-rotation controlled transfer are also shown.
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申请公布号 |
US4357684(A) |
申请公布日期 |
1982.11.02 |
申请号 |
US19800203354 |
申请日期 |
1980.11.03 |
申请人 |
BELL TELEPHONE LABORATORIES, INCORPORATED |
发明人 |
MUEHLNER, DIRK J.;NELSON, TERENCE J.;WOLFE, RAYMOND |
分类号 |
G11C19/08;(IPC1-7):G11C19/08 |
主分类号 |
G11C19/08 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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