发明名称 MANUFACTURE OF SEMICONDUCTOR DEVICE
摘要 PURPOSE:To prevent a fine Al wire from contacting with a molding material directly and being corroded, by forming an oxie film on an Al surface of a bonding pad, after connecting the fine Al wire to the bonding pad. CONSTITUTION:A diffusion layer 2, an SiO2 film 3, an Al pattern 4 and a protection film 5 are formed on a main surface of an Si substrate 1. The protection film 5 on a bonding pad 6 is removed. The element is connected to an IC header 7. A fine Al wire 8 connects the bonding pad 6 and an IC lead 9. The whole element is sealed by a molding material 10. In this case, after the connection of the fine wire, an Al oxide film 11 of 1,000-2,000Angstrom is formed on the surface of the bonding pad 6, and fine Al wire 8.
申请公布号 JPS57178337(A) 申请公布日期 1982.11.02
申请号 JP19810063288 申请日期 1981.04.28
申请人 OKI DENKI KOGYO KK 发明人 OIMURA KATSUHIKO;SAKAMOTO KOUICHI;ICHIKAWA FUMIO
分类号 H01L21/60 主分类号 H01L21/60
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