| 摘要 |
PURPOSE:To form a guard ring accurately by shaping an oxide film and a nitride film onto a silicon substrate is stacking form, etching the side of the oxide film and implanting ions in a removed section. CONSTITUTION:The oxide film 2, the nitride film 3, the oxide film 4 and the nitride film 5 are formed successively onto the N type silicon substrate 1 in stacking shape, and the nitride film 5 and the oxide film 4 are removed selectively through etching by using a mask 6. The exposed section of the nitride film 3 is removed through eetching, and the side surface section of the oxide film 4 is side-etched through the process. The substrate 1 is oxidized in a wet oxygen atmosphere, and a thick oxide film 7 is shaped to a section not coated with the nitride film. The exposed sections of the nitride films 4, 5 are removed through etching, the B ions are implanted and diffused, and the guard ring 8 is formed. The oxide films 4, 2 and the nitride film 3 are removed, an electrode 9 is shaped to the surface of the substrate 1 and a Schottky-barrier 10 is formed. |
