| 摘要 |
PURPOSE:To obtain an Si film having reduced H2 content and improved quality, by decomposing the reaction gas to an extent that there is essentially no precipitation of Si, evacuating the contained H2 selectively, feeding the reaction gas to the evacuated reactor, and carrying out the plasma CVD. CONSTITUTION:The reaction gas comprising SiH4 gas and optionally mixed with B2H6 gas etc. is fed to the reactor 1 through the opening 13 of the gas inlet tube 6. The SiH4 gas is decomposed by the silent discharge in the decomposing chamber 12 to an extent that there is no precipitation of Si, and introduced into the double-walled tube. H2 gas existing in the reaction gas is removed in the double-walled tube by evacuating through the hydrogen-permeable membrane 9 to reduce the H2 content of the reaction gas. The reaction gas is sent to the reactor 1 evacuated through the evacuation tube 8 to a required degree of vacuum, and decomposed by the glow discharge generated by imposing electrical potential between the upper and the lower electrodes 2,4. An Si film is deposited on the substrate plate 5 heated with the heater 3. |
