| 摘要 |
A method for forming a device isolation film of a semiconductor device is provided to bury the trench of the active area stably in the trend of the high integration of the semiconductor device. A method for forming a device isolation film of a semiconductor device includes a step for forming an embedded layer in a substrate; a step for forming a trench and an insulating layer(205). The embedded layer is formed by injecting oxygen atoms into the predetermined region of substrate. The embedded layer can be formed on the portion near to the surface of substrate or distanced from the surface of substrate. The trench is formed to exposes the embedded layer. The insulating layer is formed on the surface of the embedded layer to fill the trench.
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