| 摘要 |
PURPOSE:To form a minute pattern by a method wherein the first material film on the specified substrate is provided with the mask made of the second material and the surface of the second material is etched in the atmosphere of specified plasma while the exposed surface of the first material is provided with the plasma polymer film as a mask for etching. CONSTITUTION:Al 3 is accumulated on an SiO2 film on an Si substrate 1 to perform reaction type ion etching making use of an SiO2 4 formed by the plasma CVD processing as a mask. At this time, SiO2 film 4 is etched accumulating the plasma polymer film 5 on Al 3. Next Al 3 is etched making use of the polymer film 5 as a mask forming the required wiring pattern. Lastly the polymer film 5 is removed by reducing to ashes by means of O2 plasma. The first material comprising metal, Si, Si3N4 or macromolecule film and the second laterial comprising SiO2 film are effective when they are utilized for etching in the plasma atmosphere of CF4 and H2. |
