| 摘要 |
PURPOSE:To obtain the device whose area is small and narrow and diffusing depth is very shallow, by forming a reverse conductive type region on a conductive region which is exposed in a hole provided in a diffused mask comprising an insulating film, with the relationship being provided so that the end of a P-N junction is located on the surface of the conductive region, and providing an electrode through a non-single crystal layer. CONSTITUTION:A P type base region 8 is diffused and formed in the surface layer part of an N type Si substrate 9 which is to become a collector region. An SiO2 film 10 is deposited on the entire surface including the region 8. A photoresist film 14 having a window corresponding to the central part of the region 8 is used as a mask, and a window 15 is provided in the film 10. Then, a concave part 16 is formed in the region 8 exposed in the window 8 by the etching. The film 14 is removed and a non-single crystal layer 11 is deposited on the entire surface. N type impurity ions are implanted from the vertical direction, and the conductive property is imparted to the part other than side walls 111 of the concave part 16. Thus the area at the bottom of the concave part 16 is reduced. Then heat treatment is performed and the impurities are diffused from the non-single crystal layer 11 at the bottom of the concave part 16, and an N type emitter region 7 is formed in the region 8. |
