| 摘要 |
PURPOSE:To obtain a thin film diode having low forward resistance and a small reverse leakage current by a method wherein the first In2O3 electrode is provided on a shading insulting substrate and a photoelectric conversion layer of CdS-Te is formed on the electrode and furthermore, the second Au electrode is provided on the layer. CONSTITUTION:The first In2O3 electrode 2 with a desired pattern is provided on a shading insulating substrate 1 by vacuum evaporation, sputtering or the like and a CdS film 3 is formed on the electrode 2 in the same way and heat treatment is applied in an Ar gas atmosphere at 400 deg.C for about 30min. Next, a Te film 4 is formed on the CdS film 3 to form a photoelectric conversion layer and the second Au electrode 5 is provided on the Te film 4. After that, element- shaped patterning is applied to a diode part by ion beam etching and a protective insulating film 6 consisting of insulating resin for preventing leakage is formed on the surface and side of the electrode 5 and a wiring lead 7 such as Au contacting with the electrode 5 is installed by providing an opening. |
