| 摘要 |
PURPOSE:To obtain a laser element having low light loss and low reactive current by a method wherein a crystal layer for laser operation forming a hetero junction and limiting an active region is grown on an N type GaAs layer providing a stripe shaped groove and having a carrier concentration of 3X 10<18>cm <-3> or more and a refractive index type waveguide mechanism is composed. CONSTITUTION:An N type GaAs layer 26 having carrier concentration of 3X 10<18>cm<-3> or more is piled on a P type GaAs substrate 25 and a V-shaped stripe groove 27 entering into the substrate 25 is perforated at the central section. Next, a P type GaAlAs clad layer 21, N type or P type GaAlAs active layer 22, N type GaAlAs clad layer 23, and N type GaAS cap layer 24 are stacked and grown on the whole surface including the groove 27. An Au-Ge-Ni alloy N side electrode and a P side electrode such as Au-Zn are formed on the layer 24 and the rear of the substrate 25 respectively and resonant end surfaces are formed b y cleavage. In this way, the difference in a real number section is formed larger than the difference in imaginary number section in the difference in effective double refractive index at the inside and outside of the groove 24 and current confinement to the groove 27 is made perfect. |
