发明名称 METHOD AND DEVICE FOR VACUUM DEPOSITION
摘要 PURPOSE:To form a thin film of high quality easily by ionizing and accelerating the gas to be acted upon the gaseous flow of an evaporating material, further neutralizing the same and releasing this gas to the evaporating material in a vacuum chamber. CONSTITUTION:The gas to be released to the gaseous flow of an evaporating material is first introduced through an introduction port 6 into an ionization chamber 7, where it is ionized. The ionized gas is accelerated to several hundreds eV-several KeV by an accelerating electrode 8, and in an electric charge exchanging chamber 11, it is brought into collosion against the neutral gas of the same kind introduced through an introduction port 10 for electric charge exchanging gas, whereby electric charge exchanging is effected. The neutralized gas advances straightforward while retaining energy, but the electric charge exchanging gas is discharged with a vacuum pump 12. Of the gas flowing straightforward, some fails to be neutralized and therefore a magnetic field is applied thereto with a generator 13 for removal of ion components to deflect ion components, so that only the neutral gas is conducted through a neutral gas flow nozzle 15 into a vacuum vessel, where it is used for vacuum deposition.
申请公布号 JPS57171660(A) 申请公布日期 1982.10.22
申请号 JP19810057376 申请日期 1981.04.15
申请人 MATSUSHITA DENKI SANGYO KK 发明人 TAKAO MASATOSHI
分类号 C23C14/24;C23C14/00;C23C14/22 主分类号 C23C14/24
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