| 摘要 |
PURPOSE:To obtain a wiring layer of ultrafine size by covering a semiconductor substrate formed with an insulating film having a contact hole with the first metallic film, heat treating it to produce a metal-semiconductor compound film in the hole, removing the unreacted first film and burying the second metallic film in the first metallic film remaining on the bottom surface. CONSTITUTION:With an insulating film 2 as a mask the prescribed diffused layer 3 is formed on an Si substrate 1, an insulating film 4 is coverted again on the overall surface including the layer 3, a contacting hole 5 is opened at the position corresponding to the layer 3, and a Px film 6 of the first thin metallic film having a thickness of approx. 500-1,000Angstrom is covered by sputtering or depositing on the overall surface. Then, it is heat treated at 500-700 deg.C in the N2 atmosphere to produce a platinum silicide film 7, the unreacted film 7 is removed by aqua regia, and the film 7 allows to remain only on the bottom of the hole 5. Thereafter, the film is buried with an Ni film 8 of the second metallic film by plating, and an aluminum wire layer 9 which makes contact with the film is mounted. |
