Semiconductor integrated circuit devices

摘要

In a semiconductor integrated circuit device having a polyimide-type resin film 16 formed on a semiconductor substrate 1 and an aluminum wiring layer 17 formed on the surface of the polyimide-type resin film the wiring layer 17 contains between 0.1% to 10% by weight silicon to increase corrosion resistance. Alternatively nickel or boron may be used in place of silicon.