Semiconductor device.

摘要

A semiconductor device comprising a semiconductor substrate of the first conductivity type (120), a self substrate bias generator formed in the semiconductor substrate for generating a voltage with the opposite polarity to that of a externally applied voltage and having a capacitive element (112) and a rectifier element (114, 118) and a group of circuit elements supplied with a voltage generated by the self substrate bias generator, characterized in that the semiconductor substrate of the first conductivity type is supplied with a first reference potential (VDD) selected so as to prevent minority carriers from the capacitive element and the rectifier element from entering into the semiconductor substrate; and the circuit element group is formed in a first semiconductor region (122) formed in the semiconductor substrate.