| 摘要 |
PURPOSE:To form the excellent silicide layer having low resistance extending over the whole region by forming a polycrystal Si layer, to which phosphorus is doped, onto a base body to be treated, heating and annealing the base body, shaping a high-melting point metal layer onto the Si layer, elevating the temperature and alloying the Si layer and the metal layer. CONSTITUTION:Field oxide films 2 are formed to the surface of the first conduction type semiconductor substrate 1 and channel cut regions 3 under the films 2. A gate oxide film 4 is shaped onto the surface of the substrate 1, and a polycrystal Si layer 5 not doped is coated and molded. Phosphorus ions 6 are implanted in the whole upper surface of the layer 5, and the substrate 1 is heated and annealed in an inactive atmosphere and the polycrystal Si layers 5' to which phosphorus is doped are formed. The high-melting point metal layers 7 are shaped onto the layers 5', and gate wiring 8 with double structure consisting of the layers 5' and the layers 7 is formed onto the film 4 through selective etching. The whole is heated in an inactive atmosphere or vacuum, the layers 7 and the layers 5' are alloyed, and the gate wiring 9 of high-melting point metallic silicide is shaped. |
