发明名称 |
LOW RESISTANCE SCHOTTKY DIODE AND METHOD OF PRODUCING SAME |
摘要 |
A Schottky diode is fabricated according to the following steps: forming a layer of metal-silicide on an underlying dielectric layer, forming a polysilicon layer on the upper surface of the metal-silicide layer, forming a second dielectric layer on the upper surface of the polysilicon layer and patterning the second dielectric layer to create a contact window through the second dielectric layer to an exposed surface region of the polysilicon layer, and forming a metal contact to the exposed surface region. |
申请公布号 |
JPS57167686(A) |
申请公布日期 |
1982.10.15 |
申请号 |
JP19820007737 |
申请日期 |
1982.01.22 |
申请人 |
FAIRCHILD CAMERA & INSTRUMENT CORP |
发明人 |
MAJIYUKAARU BII BORA;HEMURA KEI HINGAA |
分类号 |
H01L21/329;H01L21/70;H01L21/84;H01L29/04;H01L29/47;H01L29/861;H01L29/872 |
主分类号 |
H01L21/329 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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