| 摘要 |
PURPOSE:To improve the manufacturing yield by a method wherein, when the static induction type semiconductor device is manufactured by means of jointly providing the multiple unit elements in one semiconductor base with the main electrodes of one side mutually separated, the gate bias voltage, the design withstand voltage of the P-N junction and the withstand voltage between the gate electrodes are specified. CONSTITUTION:The static induction type semiconductor diode is manufactured by means of jointly providing the multiple unit elements in one semiconductor base with the main electrodes of one side such as a cathode electrode mutually separated. At this time, the main electrodes of the other side are commonly connected excluding the main electrode of one side unit element with the VGK value meeting the requirements of the expression, i.e. VGK1<=VGK<VGK2, where VGK1 is the absolute values of the gate bias electrode impressed between the gate electrode required to block the voltage between a pair of main electrodes and the main electrode of one side when the main voltage in the direction of the rating orde is impressed between a pair of main electrodes of the element unit constitution while VGK2 is the design withstand voltage of the P-N junction between the main electrode region of one side and the gate region and VGK is the actual withstand voltage between the main electrode of one side and the gate electrode. |
