| 摘要 |
PURPOSE:To improve heat radiating property by mounting a semiconductor module or a high density integrated circuit on a substrate made from electrically insulating sintered body which mainly consists of silicon carbide. CONSTITUTION:Electrically insulating property of sintered body which mainly consists of silicon carbide is obtained by adding at least one of beryllium oxide and boron nitride and amount of the beryllium oxide and the boron nitirde added to the silicon carbide powder is determined by resistivity (not less than 10<10>OMEGAcm). For instance, semiconductor elements such as a silicon transistor pellet 14, a thick film resistor 15 and a silicon power transistor pellet 17 mounted on a metal heatsink 18 are mounted on a sintered SiC insulation substrate 11 which is made of sintered mixture of 100pts.wt. of silicon carbide powder and not less than 2pts.wt. of beryllium oxide powder additive. As the SiC insulation substrate is used, the composition has enhanced heat radiation property, so that capacity of each element can be increased and the integrity of elements can be improved. |
