| 摘要 |
PURPOSE:To obtain a semiconductor wafer inhibiting the occurrence of a crystal defect deformation as well even if rapid cooling is performed after heat treatment by providing a nearly central section thereof with a distortion absorbing hole penetrated in the thickness direction. CONSTITUTION:A round distortion absorbing hole 12 penetrated in the thickness direction is perforated and provided at the central section of a semiconductor wafer 11. With rapid cooling executed after applying heat treatment to the hole 12, crystal distortion by contraction concentrates on the central section. However, as the hole 12 is formed at the central section, the crystal distortion is dispersed and absorbed in the hole 12 and the occurrence of a crystal defect and the deformatin of the wafer can be prevented. The temperature at the central section of a core tube 21 can exactly be obtained by passing a thermocouple 23 through the hole 12 at the central section of the semiconductor wafer 11 arranged on a boat 22. The size of the distortion absorbing hole 12 is preferabley be approximately 10% or more of the diameter of the wafer. |
