| 摘要 |
<p>A method of masking surfaces (11) during fabrication of semiconductor devices is disclosed, which includes providing a substrate (10), and in a preferred embodiment a silicon substrate. The surface (11) is hydrogen terminated (12) (or hydrogenated) and a metal mask (15) is positioned on the surface (11, 12) so as to define a growth area (16) and an unmasked portion (17) on the surface (11, 12) Ozone is generated at the surface (11, 12), at least in the unmasked area (17), by exposing the surface (11, 12) to a light (21) having a wavelength approximately 185 nm (an oxygen absorbing peak), so as to grow an oxide film (20) on the unmasked portion (17) of the surface (11, 12). The metal mask (15) is removed and the oxide film (20) then serves as a mask for further operations and can be easily removed in situ by heating. <IMAGE></p> |
