| 摘要 |
PURPOSE:To obtain easily wiring films having small step parts on a semiconductor device by a method wherein a polycrystalline Si layer having high resistance and a conductive film are laminated on an insulating film and on openings for electrodes on a semiconductor substrate, and selective laser irradiation is performed. CONSTITUTION:The prescribed openings are provided in the SiO2 film 12 on the Si substrate being formed with the prescribed diffusion layer, the polycrystalline Si layer 13 is formed on the whole surface by the CVD method, and Al 14 is evaporated on the whole surface. Then ND-YAG laser beam is irradiated thereon selectively to melt Al and polycrystalline Si, and conductive films 15 having low resistance are formed selectively. Then remaining Al 14 is etched to be removed by the HNO3 liquid, and high resistance regions 13 and low resistance regions 15 are formed in the polycrystalline Si film. By this constitution, the low resistance conductive films can be obtained only at the desired flat places having no step part, and the high density device necessitating multilayer wiring can be obtained easily. |
