| 摘要 |
PURPOSE:To prevent damages otherwise inflicted upon a wafer by a method wherein a first energy beam transforms a layer into a monocrystalline layer and another scan in a different direction divides or reduces crystallization generated set. CONSTITUTION:A first scan is made in the direction of an axis X in parallel with a facet 4a, wherein a polycrystalline layer 4c on a monocrystalline substrate 4b is entirely melted for transformation into a monocrystalline layer. Next, a second scan, with its irradiation intensity weaker than the first, is conducted in the direction of an axis Y and at a right angle to the facet 4a. This realizes the division of monocrystallization caused set and stress concentration at the end of a scanning line without remelting the monocrystallized semiconductor layer 4c surface. A second monocrystalline layer 4d is obtained with reduced crystal defects, crystal granules, cracks, and uneven surface. |
