| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device capable of suppressing breakage of the semiconductor device in a reverse recovery state.SOLUTION: A semiconductor device according to an embodiment has: a first semiconductor region of a first conductivity type, a first electrode, a second electrode, a third electrode, a first insulation part, a second insulation part, a second semiconductor region of a second conductivity type, a third semiconductor region of the first conductivity type, a fourth semiconductor region of the second conductivity type, and a fourth electrode. The second electrode has a first electrode portion and a second electrode portion. The second electrode portion extends in a first direction. The second electrode portion is provided between a plurality of first electrode portions and the first electrode in a second direction. The fourth semiconductor region is located between the adjacent first electrode portions in the first direction.SELECTED DRAWING: Figure 4 |
