| 摘要 |
PURPOSE:To eliminate the formation of a mound caused by the adhesion of a reactive product by maintaining the main surface to be formed with a thin layer such as an epitaxial layer of a semiconductor substrate at lower than 90 deg. with respect to the horizontal surface to form the thin layer. CONSTITUTION:A cover 8 is opened, an N<+> type semiconductor substrate 12 is supported on a susceptor holder 19 with the surface engaged with the substrate 12 downside in a furnace core tube 1, an assembly having an angle theta set to lower than 90 deg. is inserted, and the cover 8 is closed. Then, inert gas such as nitrogen gas is introduced from a gas inlet 6 to substitute for the interior of the tube 1, a high frequency heating coil 9 is energized, and is heated to approx. 1,200 deg.C. Impurity gas P2O5 is introduced with reaction gas 13 such as tetrachlorided silicon gas, hydrogen gas or trichlorosilane gas and hydrogen gas from the inlet 6, and an N<-> type epitaxial layer is grown on the substrate 12 by reduction reaction. |
