NON-VOLATILE MEMORY USING SEMICONDUCTOR COMPOUND

摘要

PURPOSE:To manufacture the non-volatile memory operating at high speed by a method wherein the hetero joint comprising the non-dope GaAs layer and the N type GaAs layer is used as the electronic storage layer. CONSTITUTION:The N type GaAs layer 11 with several mum thcikness and the non-voltile GaAs layer 12 with less thickness of 50-1,000Angstrom are laminated on the N type GaAs substrate 10 to be epitaxially grown. Then the first insulating film 14 with around 200Angstrom thickness is mounted on the central part of said layer 12 and the floating gate 14 comprising Mo or multicrystal Si with less dimension is formed on said insulating film 14 and the exposed surface of the film 14 is surrounded by the second insulating film 15 whereon the gate electrode 16 is mounted. Then the source electrode 17 and the drain electrode 18 are respectively formed on the layer 12 holding the gate 13 while the reverse side of the substrate 10 is also coated with the substrate electrode 19. Through these procedures, the electronic storage layer is consistued by means of the hetero joint with the said layer 11 making use of said thinner layer 12 as the operating layer.