| 摘要 |
PURPOSE:To prevent the voltage destruction of a semiconductor device by filling highly dielectric substance between a pair of electrodes connected to a pair of leads of a semiconductor element having rectifying function in a structure that a capacitor is connected in parallel in an equivalent circuit, thereby absorbing the high surge voltage. CONSTITUTION:An Si pellet 1 having a rectifying function and an electrode 2 are secured with solder material. The pellet and the electrodes are covered with glass 3. A lead 6 is connected to the electrode 2, a capacitor electrode plate 4 is connected to the electrode 2. Organic macromolecular material 7 is filled between the electrode 6, and the entirety is packaged with covering resin 5. This diode is used at the rated voltage of several tens to 2,000V. In this manner, high surge voltage can be absorbed by a capacitor, thereby preventing the voltage destruction and being adapted for an ignition circuit of an automotive engine. |
