| 摘要 |
PURPOSE:To enable writing and erasing with low voltage by forming an MOS region for writing and erasing to a floating gate through a tunnel barrier film and an MOSFET connected to the gate. CONSTITUTION:A floating gate 6 is formed through a tunnel barrier film 5 of 20-200Angstrom and the first gate electrode 8 is formed through the second insulating film 7 on the N<+> type region 4 of a P type Si substrate 1 to form an MOS region for writing and erasing, and an MOSFET region made of a source 2, a drain 3 and a gate electrode 10 is formed, the electrode 10 and the gate 6 are electrically connected, and the conductivity of the channel of the MOSFET is varied by the charge stored in floating. In this manner, the writing and erasing with low voltage and high speed can be performed. |
