发明名称 |
Double crucible Czochralski crystal growth apparatus |
摘要 |
An apparatus useful for double crucible Czochralski crystal growth comprises an inner crucible fixed within an outer crucible wherein the inner crucible contains an extra volume or reservoir of semiconductor melt when flow of semiconductor melt from the outer crucible into the inner crucible through means interconnecting the crucibles ceases.
|
申请公布号 |
US4352784(A) |
申请公布日期 |
1982.10.05 |
申请号 |
US19790042693 |
申请日期 |
1979.05.25 |
申请人 |
WESTERN ELECTRIC COMPANY, INC. |
发明人 |
LIN, WEN |
分类号 |
C30B15/12;(IPC1-7):C30B15/12 |
主分类号 |
C30B15/12 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|