发明名称 MANUFACTURE OF SEMICONDUCTOR DEVICE
摘要 PURPOSE:To obtain uniform diffusion depth and uniform surface impurity density by setting the time in which a BN plate faces with a wafer in a uniformly high temperature zone of a diffusing apparatus equally even at any wafer on a boat. CONSTITUTION:A boat 6 for charging a solid diffusion source 5 by a BN plate and a diffusion boat 7 for charging wafers 8 are prepared, the boats 6 and 7 are sequentially inserted into a diffusion equipment, and after the thermal diffusion, the source 5 and the wafer 8 are sequentially pulled out so that the time in which the source 5 faced with the wafers 8 equally on the boat in the uniformly heating high temperature zone of a reaction tube 9. For example, the wafers 8 are inserted as shown, and are pulled out as shown after the diffusion. Thus, the wafer of any position is faced with the source 5 during the equal time.
申请公布号 JPS57159018(A) 申请公布日期 1982.10.01
申请号 JP19810043212 申请日期 1981.03.26
申请人 OKI DENKI KOGYO KK 发明人 TSUBONE HITOSHI;AKAHA KOUJI
分类号 H01L21/223;H01L21/00;H01L21/673;(IPC1-7):01L21/22 主分类号 H01L21/223
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