| 摘要 |
PURPOSE:To obtain the semiconductor diaphragm type sensor having excellent stability which will not be affected by the primary factors of external characteristic modulation such as temperature, static pressure, induced noise and the like by a method wherein an insulating material, having the expansion coefficient approximate to that of a pressure-sensitive element, is used. CONSTITUTION:The semiconductor diaphragm type sensor consists of a pressure- sensitive element 1, having a piezo resistance element formed on one main surface by diffusing impurities and consisting of a semiconductor substrate which performs a diaphragm action in accordance with the applied pressure, and a supporting member 2, consisting of an insulating material having silicon carbide (SiC) as a main component, which is used to fix the pressure-sensitive element. This insulating material consists of a sintered substance, having relative density of 95% or above and a specific resistance value of 10<10>/cm or above, wherein 0.05-7.5% in beryllium conversion of beryllium or its compound (for example, Be-O, Be-N, Be-C, Be-Si and the like) is added to silicon carbide which is the main component of the insulating material. |
