| 摘要 |
PURPOSE:To obtain a silicon epitaxially grown layer having preferable characteristics without impurity by reducing and removing natural oxided film on a substrate with reducing gas and then epitaxially growing it. CONSTITUTION:A silicon substrate having high density N type buried layer 1 is prepared. This substrate is installed at the prescribed position in a vapor phase growing device chamber, is heat treated with H2 gas, and the naturally oxidized film 1 is reduced and removed. After the heat treatment, the temperature of the substrate is lowered, and polycrystalline silicon film 4 is grown with SiH4 gas. To form amorphous silicon film from the polycrystalline silicon film, silicon oil 5 is continuously implanted from the surface of the substrate. At this time part of the buried layer is converted into amorphous layer. Finally, it is heat treated in N2 gas, thereby epitaxially growing in solid phase the amorphous layer 6 and obtaining single crystallized film without irregularity. |
