| 摘要 |
PURPOSE:To enable an X-ray absorbing pattern to be formed exactly as required even if an X-ray absorbing layer has a large thickness, by providing a mask layer on the X-ray absorbing layer, the mask layer being formed of the same material as that of the X-ray absorbing layer but having a different construction, further providing a resist pattern and etching the X-ray absorbing layer. CONSTITUTION:An X-ray transmitting layer 2 is formed on an X-ray mask support 1. On the layer 2, there are provided an X-ray absorbing layer 3 and a mask layer 4 formed of the same material as that of the X-ray absorber layer 3 but having a different construction, sequentially in that order. After a predetermined resist pattern 7 is formed on the mask layer 4, the structure is subjected to etching treatment so that the X-ray absorbing layer 3 is etched in pattern. For example, a BN film 2 is deposited on a silicon wafer 1, and then W films 3 and 4 are deposited thereon. A resist pattern 7 as required is formed thereon, and the W film 4 masked with the pattern 7 is etched by RIE to form a W pattern 8. The X-ray absorbing W film 3 is then etched to form an X-ray absorbing W pattern 9. Finally, the wafer 1 is etched from the rear thereof so as to leave a part of the wafer unetched for providing a support frame. |
