| 摘要 |
<p>PURPOSE:To reduce the capacity of a line, perform operation at high speed and reduce power consumption by setting the gate insulating film of a memory cell storing more data out of the memory cells connected in the same line, to be thick. CONSTITUTION:A semiconductor read-only memory device stores the binary status of data by changing the capacity of threshold voltage by setting the thickness of a gate insulating film in each memory cell MC6 consisting of an insulation gate type field effect transistor (FET). Out of binary data stored in plural MCs 6 connected to one line 2 of the said memory device, the thickness of a gate insulating film of the MC6 storing more data is set up so as to be thick. The said memory device is provided with a discriminating means 11 to discriminate the data stored in the MC6 where the said film thickness is set up so as to be thick in each line and a converting means to convert read data into regular data according to the discriminated result.</p> |
