| 摘要 |
PURPOSE:To enhance the turn-ON efficiency of a buried gate type gate turn-OFF thyristor by connecting an N type emitter layer of an auxiliary thyristor unit through an isolation resistor to the P type gate layer of a main thyristor without direct shortcircuit, thereby eliminating an wasteful current at the turn-ON time. CONSTITUTION:A P2 type base layer having a lattice-shaped P<+> type buried region is formed on the same N1 layer, and an N2 cathode layer is formed on one of the common P2 base layer, thereby forming a main thyristor GTOM. An N3 emitter layer is formed in the P2 base layer in contact with the main thyristor, thereby forming an auxiliary thyristor GTO. In this structure, a resistance part SEL having a resistor R is interposed between the two thyristors GTOM and GTOA while maintaining a distance 1, and the resistance value of the P2 base layer as a current passage between the two thyristors is increased. Thereafter, the emitter electrode G2' of an N3 emitter layer and the gate electrode G2 of an NH2 cathode the layer are connected via an external wire. In this manner, the refiring of the thyristor at the turn-OFF time can be prevented. |
