| 发明名称 |
Method of forming pattern. |
| 摘要 |
<p>A method of forming a pattern is disclosed in which, after a resist pattern formed on a workpiece has been implanted with an ion, dry etching is carried out while using the ion-implanted resist pattern as a mask. The resistance of the resist pattern to dry etching is greatly improved by the ion implantation, and therefore a fine, accurate pattern can be formed.</p> |
| 申请公布号 |
EP0061350(A1) |
申请公布日期 |
1982.09.29 |
| 申请号 |
EP19820301537 |
申请日期 |
1982.03.24 |
| 申请人 |
HITACHI, LTD. |
发明人 |
MOCHIJI, KOZO;WADA, YASUO;OHYU, KIYONORI |
| 分类号 |
H01L21/302;G03F7/40;H01L21/027;H01L21/3065;(IPC1-7):01L21/308;03F7/26;05K3/00 |
主分类号 |
H01L21/302 |
| 代理机构 |
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代理人 |
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| 主权项 |
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| 地址 |
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