发明名称 SEMICONDUCTOR MEMORY DEVICE
摘要 PURPOSE:To reduce the probability of generation of a soft error due to alpha rays irradiation by pulling up only bit lines in the high voltage side more than power voltage at the time of active pulling-up after sensing operation. CONSTITUTION:In addition to a signal AP, a signal BC is also an input for a circuit. Since BC is Vcc and over at the time of reset, transistors (Trs) Q102, Q103, Q105, Q110 and Q112 are on, points N102 and N103 are charged up to Vcc and points N101, N104 and N105 and a signal CP are kept in the Vcc level. When the level of the signal BC is made fall down to Vss to shift to the active pulling-up status and then the signal AP is made rise up to Vcc, the Tr Q104 is turned on, the point N102 falls down to Vss and the Trs Q110, Q112 are turned off. When the Tr Q104 is off and the Tr Q111 is on, the gate voltage rises more than Vcc and consequently the output CP has the same phase as the AP and waveform with amplitude Vcc delayed by a fixed period from the waveform of AP.
申请公布号 JPS57158088(A) 申请公布日期 1982.09.29
申请号 JP19810043502 申请日期 1981.03.25
申请人 FUJITSU KK 发明人 TAKEMAE YOSHIHIRO;NAKANO TOMIO
分类号 G11C11/409;G11C7/12;H01L21/8242;H01L27/10;H01L27/108 主分类号 G11C11/409
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