| 摘要 |
A semiconductor laser diode is disclosed with a connection electrode consisting of a chromium/gold alloy on a highly-doped gallium arsenide layer. The gallium arsenide layer is strip-shaped and overlies a further lesser doped layer of gallium aluminum arsenide. The chromium/gold contact has a low-resistance junction only in the region of the more highly doped layer so that a strip-shaped restriction of the current path occurs in the semisconductor body. Accordingly, a laser-active zone which is only strip-shaped is achieved.
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