| 摘要 |
PURPOSE:To obtain a transistor with low base resistance, by constituting an emitter electrode of polycrystal and metal silicide to provide a metal silicide layer extended in the direction of emitter junction in the semiconductor substrate on the lower surface of a base conduct. CONSTITUTION:An oxide film 12 and a nitride film 31 as an oxidation resistant film are adhered on an n<+> type substrate 1 having an n<-> type layer 2 and p type base layer 3 further to etch and remove the film on the region serving as an emitter after the formation of the oxide film 13 thereon. Next, an n<+> type polycrystal silicon film 41 is grown with the nitride film 32 adhered thereon. Subsequently, the nitride film 32 and polycrystal silicon film 41 are removed with a resist film 51 as a mask to form the p<+> type region 4 by ion implantation. Next, etching is performed after the formation of the oxide film 14 on the side surface of a polycrystal silicon pattern 42, thus to form low resistant metal silicide layers 61, 62 consisting of Pt, Pd, Mo, etc. on the surfaces of exposed polycrystal silicon pattern 42 and p type region 4. |
