发明名称 MOUNTING STRUCTURE OF RESIN MOLD-TYPE HIGH-FREQUENCY TRANSISTOR
摘要 PURPOSE:To effectively achieve shield and to improve gain attenuation amount at the time of mounting a tuner by a method wherein a pellet is fixed to the inside terminal of a source lead and the lower part and the upper part of the pellet are covered by a ground line and the source lead having the equivalent potential to the ground. CONSTITUTION:In a resin mold type FET3, a pellet 8 is mounted on a wiring substrate 1 so that the pellet 8 may locate at the lower surface of a source lead 9. A resin package 4 is mounted on the ground line 2 of the wiring substrate 1 and the external terminals of two gate leads 11, a drain lead 12, and a source lead 9 are bent downwards. Furthermore the external terminals are reversely bent for horizontality to superimpose the tips on each wiring layer and leads 5 are fixed to a wiring layer 6. In this way, gain attenuation amount at the time of mounting a tuner is improved.
申请公布号 JPS57155754(A) 申请公布日期 1982.09.25
申请号 JP19810040337 申请日期 1981.03.23
申请人 HITACHI SEISAKUSHO KK 发明人 HOTSUTA KIYOMICHI;MASUDA AKIRA
分类号 H05K1/18;H01L23/32;H01L23/66;H05K1/02 主分类号 H05K1/18
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