| 摘要 |
PURPOSE:To reduce the parasitic capacity as well as to perform a high speed operation for the subject semiconductor device by a method wherein a dielectric region is formed in a semiconductor substrate, and an element region is isolated from the substrate. CONSTITUTION:A photoresist film 39 is formed on the semiconductor substrate 20, and an aperture 40 is formed using a photo etching method. Then, a groove 41 is formed by performing an anisotropic etching. Subsequently, after the film 39 has been removed, an oxide film 42 and a protective film 43 are formed. Then, the films 42 and 43 located at the bottom section 41a are removed. A dielectric region 23b is then formed by performing thermal oxidation. Then, after the film 43 has been removed, an oxide film 23c is formed and the dielectric is buried in the groove 41. Subsequently, transistors 34 and 35 are formed on the element regions 21 and 22 respectively. |
