发明名称 MANUFACTURE OF SEMICONDUCTOR DEVICE
摘要 PURPOSE:To obtain a minute pattern by a method wherein a substrate is coated with a photo-resist film or an electron-ray resist film, solubility is lowered previously by irradiating ions to a predetermined region, the pattern, a section thereof takes an inverted trapezoid, is formed through development, the whole surface is coated with a conductive metallic film, and the pattern is removed together with the metallic film on the pattern. CONSTITUTION:The substrate 1 is coated with the film 2 of a positive type or negative thpe photo-resist or an electron-ray resist or the like, the P<+> ions, etc. are irradiated to the regions in which Al wiring is not shaped, and irradiated sections 3, the solubility of surface layer sections thereof lowers, are formed. The film 2 of a section where the ions are not irradiated is removed through development while the films 2 of the lower sections of the irradiated sections 3 are left as the sections are formed in the inverted trapezoid. The whole surface 1 is coated with the Al film 4, but the films 4 coated on the exposed substrate 1 and the irradiated sections 3 are separated completely at that time. Accordingly, the films 2 just under the irradiated sections 3 are removed together with the films 4 on the films 2, and the films 4 of the desired minute patterns are obtained on the surface of the substrate 1.
申请公布号 JPS57153435(A) 申请公布日期 1982.09.22
申请号 JP19810037976 申请日期 1981.03.18
申请人 HITACHI SEISAKUSHO KK 发明人 WADA YASUO;MATSUZAWA TOSHIHARU;OOHAYASHI HIDEHITO;KIMURA TAKESHI;MOCHIJI KOUZOU
分类号 G03F7/20;H01L21/027;H01L21/306 主分类号 G03F7/20
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