| 摘要 |
PURPOSE:To easily obtain a photoconductive member with superior electric, optical and photoconductive characteristics by introducing mixed gaseous starting material prepared by selecting specified silanes and halogen-contg. Si compounds and mixing them when a photoconductive layer is formed on a support. CONSTITUTION:Starting material for forming a photoconductive layer is composed of compounds A represented by SinH2n+2, e.g., SiH4, Si2H6 and Si3H8 and of compounds B represented by SimHlXk (where l+k=2m+2, l is 0 or an integer, and X is halogen), e.g., Si2F6, Si2Cl6 and Si3F8. The starting compounds A, B are mixed so as to adjust the percentage of the compound of higher order of (m) to the compound of the lowest order of (n) or (m) to >=1vol%, and the mixture is introduced into a deposition chamber in the gaseous state. Glow discharge, arc discharge or other discharge is then caused in the mixed gaseous atmosphere to form a photoconductive layer on a support. |
