SEMICONDUCTOR DEVICE

摘要

1 PHN 9018 A semiconductor device having a planar bipolar high-voltage semiconductor circuit element comprising an island-shaped region of one conductivity type. On its lower side the island-shaped region is bounded by a first p-n junction having a comparatively high breakdown voltage, and laterally by a second p-n junction having a comparatively low breakdown voltage. The doping and the thickness of the island-shaped region are so small that the region is entirely depleted before breakdown occurs.