| 发明名称 |
Method of forming single crystals of beta silicon carbide using liquid lithium as a solvent |
| 摘要 |
A method of growing single crystals of beta SiC from solution using molten lithium as a solvent for polycrystalline SiC feed material. Reasonable growth rates are accomplished at temperatures in the range of about 1330 DEG C. to about 1500 DEG C.
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| 申请公布号 |
US4349407(A) |
申请公布日期 |
1982.09.14 |
| 申请号 |
US19790037247 |
申请日期 |
1979.05.09 |
| 申请人 |
THE UNITED STATES OF AMERICA AS REPRESENTED BY THE UNITED STATES DEPARTMENT OF ENERGY |
发明人 |
LUNDBERG, LYNN B. |
| 分类号 |
C30B9/00;(IPC1-7):C30B9/10 |
主分类号 |
C30B9/00 |
| 代理机构 |
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