| 摘要 |
PURPOSE:To contrive reduction of the carrier transit time without generating a short channel effect for the subject semiconductor device by a method wherein a reverse conductive property is given to the Si film on both sides of an Si gate against the Si film located in the center part of the Si gate. CONSTITUTION:A source 12S and a drain 12D are formed by self-matching using the gate oxide film 13 formed on a single crystal Si substrate 11 and a polycrystalline Si film 14 as a mask. Before performing the above procedure, a photoresist 9 is arranged on the film 14 as a mask. A polycrystalline Si film 16, having the conductive property reverse to the film 14, is formed in the vicinity of both ends of the film 14 by performing an ion implantation in the X direction as shown by the arrow in the diagram. Accordingly, the difference phiMS of work function between the film 4 and the substrate 11 becomes 1phiMS1=0.58V. Therefore, the difference of threshold voltage between the film 16 and the film 14 becomes 0.58V. Consequently, as the films 14 and 16 can be functioned as an enhancement type MOSFET and a depression type MOSFET, the length of effective channel can be reduced, thereby enabling to contrive reduction of the carrier transit time. |
